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 中村修二 博士(藍光LED之父)
現職：加州大學聖塔芭芭拉分校
1954年生，1977、1979年先後獲得日本德島大學電子工程學學士、碩士學位，1994年取得日本德島大學工程博士學位。
經歷：
1979－1984：日亞化學工業株式會社 產品研發部職員 主要科研成果
1985－1988：日亞化學工業株式會社 產品研發部第一課課長
1988－1989：佛羅里達大學 電子工程學客座副研究員
1989－1993：日亞化學工業株式會社 產品研發部第二課課長
1993.11：發明藍色發光二極體
1993－1999：日亞化學工業株式會社 產品研發部高級研究員
1995.12：實現InGaN/GaN藍色半導體鐳射的室溫脈衝共振
1999－2011：加利福尼亞大學聖芭芭拉分校 材料物性工學部教授
2005.10：發現了從水中提取氫的最簡易方法
2007.1：開發了世界首個無極性藍紫半導體鐳射。
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Shuji Nakamura Ph.D., (inventor of the first high brightness GaN LED)
Present Job：Universityof California, Santa Barbara, USA
Shuji Nakamura was born in Japan in 1954. He obtained B.E., M.S., and Ph.D. degrees in Electrical Engineering from the University of Tokushima, Japan in 1977, 1979, and 1994, respectively. He joined Nichia Chemical Industries Ltd in 1979. In 1988, he spent a year at the University of Florida as a visiting research associate. In 1989 he started the research of blue LEDs using group-III nitride materials. In 1993 and 1995 he developed the first groupIII nitride-based blue/green LEDs. He also developed the first group-III nitride-based violet laser diodes (LDs) in 1995. He has received a number of awards, including: the Nishina Memorial Award (1996), MRS Medal Award (1997), IEEE Jack A. Morton Award, the British Rank Prize (1998) and Benjamin Franklin Medal Award (2002). He was elected as the member of the US National Academy of Engineering (NAE) in 2003. Also, he received the Millennium Technology Prize in 2006. Since 2000, he is a professor of Materials Department of University of California Santa Barbara. He holds more than 100 patents and has published more than 390 papers in this field.
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